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Article overview
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Weak localization in GaMnAs: evidence of impurity band transport | | L. P. Rokhinson
; Y. Lyanda-Geller
; Z. Ge
; S. Shen
; X. Liu
; M. Dobrowolska
; J. K. Furdyna
; | | Date: |
17 Jul 2007 | | Abstract: | We report the observation of negative magnetoresistance in the ferromagnetic
semiconductor GaMnAs at low temperatures ($T<3$ K) and low magnetic fields ($0<
B <20$ mT). We attribute this effect to weak localization. Observation of weak
localization provides a strong evidence of impurity band transport in these
materials, since for valence band transport one expects either weak
anti-localization due to strong spin-orbit interactions or total suppression of
interference by intrinsic magnetization. In addition to the weak localization,
we observe Altshuler-Aronov electron-electron interactions effect in this
material. | | Source: | arXiv, arxiv.0707.2416 | | Services: | Forum | Review | PDF | Favorites | |
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