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19 April 2024

» arxiv » 0708.2211

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Optical characterization of GaN by N+ implantation into GaAs at elevated temperature
S. Dhara ; P. Magudapathy ; R. Kesavamoorthy ; S. Kalavathi ; K. G. M. Nair ; G. M. Hsu ; L. C. Chen ; K. H. Chen ; K. Santhakumar ; T. Soga ;
Date:	16 Aug 2007
Abstract:	Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambient. Crystallographic structural and Raman scattering studies revealed that GaN phases were grown for fluence above 2x1017 cm-2. Temperature-dependent photoluminescence study showed sharp direct band-to-band transition peak ~3.32 eV at temperature <= 200K. The intermediate bandgap value, with respect to ~3.4 eV for hexagonal and ~3.27 eV for cubic phases of GaN is an indicative for the formation of mixed hexagonal and cubic phases.
Source:	arXiv, 0708.2211
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