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25 April 2024

» arxiv » 0710.0877

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Morphology of graphene thin film growth on SiC(0001)
Taisuke Ohta ; Farid El Gabaly ; Aaron Bostwick ; Jessica McChesney ; Konstantin V. Emtsev ; Andreas K. Schmid ; Thomas Seyller ; Karsten Horn ; Eli Rotenberg ;
Date:	3 Oct 2007
Abstract:	Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as applications-oriented point of view. Here we study the emerging morphology of in-vacuo prepared graphene films using low energy electron microscopy (LEEM) and angle-resolved photoemission (ARPES). We obtain an identification of single and bilayer of graphene film by comparing the characteristic features in electron reflectivity spectra in LEEM to the PI-band structure as revealed by ARPES. We demonstrate that LEEM serves as a tool to accurately determine the local extent of graphene layers as well as the layer thickness.
Source:	arXiv, 0710.0877
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