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28 March 2024
 
  » arxiv » cond-mat/0105527

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Exchange Splitting and Charge Carrier Spin Polarization in EuO
P. G. Steeneken ; L. H. Tjeng ; I. Elfimov ; G. A. Sawatzky ; G. Ghiringhelli ; N. B. Brookes ; D.-J. Huang ;
Date 28 May 2001
Journal Phys. Rev. Lett. 88, 047201 (2002)
Subject Strongly Correlated Electrons; Materials Science | cond-mat.str-el cond-mat.mtrl-sci
AbstractHigh quality thin films of the ferromagnetic semiconductor EuO have been prepared and were studied using a new form of spin-resolved spectroscopy. We observed large changes in the electronic structure across the Curie and metal-insulator transition temperature. We found that these are caused by the exchange splitting of the conduction band in the ferromagnetic state, which is as large as 0.6 eV. We also present strong evidence that the bottom of the conduction band consists mainly of majority spins. This implies that doped charge carriers in EuO are practically fully spin polarized.
Source arXiv, cond-mat/0105527
Other source [GID 876048] pmid11801161
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