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Image-potential band-gap narrowing at a metal/semiconductor interface | Ryotaro Arita
; Yoshiaki Tanida
; Kazuhiko Kuroki
; Hideo Aoki
; | Date: |
27 Aug 2001 | Subject: | Materials Science; Strongly Correlated Electrons | cond-mat.mtrl-sci cond-mat.str-el | Abstract: | GW approximation is used to systematically revisit the image-potential band-gap narrowing at metal/semiconductor interfaces proposed by Inkson in the 1970’s. Here we have questioned how the narrowing as calculated from quasi-particle energy spectra for the jellium/Si interface depends on $r_s$ of the jellium. The gap narrowing is found to only weakly depend on $r_s$ (i.e., narrowing $simeq 0.3$ eV even for a large $r_s = 6)$. Hence we can turn to smaller polarizability in the semiconductor side as an important factor in looking for larger narrowing. | Source: | arXiv, cond-mat/0108412 | Services: | Forum | Review | PDF | Favorites |
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