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20 April 2024

» arxiv » cond-mat/0110608

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The metallic resistance of a dilute two-dimensional hole gas in a GaAs quantum well: two-phase separation at finite temperature?
Xuan P.A. Gao ; Allen P. Mills Jr. ; Arthur P. Ramirez ; Loren N. Pfeiffer ; Kenneth W. West ;
Date:	30 Oct 2001
Journal:	Phys. Rev. Lett. 89, 016801 (2002)
Subject:	Strongly Correlated Electrons \| cond-mat.str-el
Abstract:	We have studied the magnetotransport properties of a high mobility two-dimensional hole gas (2DHG) system in a 10nm GaAs quantum well (QW) with densities in range of 0.7-1.6*10^10 cm^-2 on the metallic side of the zero-field ’metal-insulator transition’ (MIT). In a parallel field well above B_c that suppresses the metallic conductivity, the 2DHG exhibits a conductivity g(T)~0.3(e^2/h)lnT reminiscent of weak localization. The experiments are consistent with the coexistence of two phases in our system: a metallic phase and a weakly insulating Fermi liquid phase having a percolation threshold close to B_c.
Source:	arXiv, cond-mat/0110608
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