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Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers | | A. K. Majumdar
; A. F. Hebard
; Avinash Singh
; D. Temple
; | | Date: |
6 Nov 2001 | | Journal: | Phys. Rev. B vol. 65, 054408 (2002) | | Subject: | Materials Science | cond-mat.mtrl-sci | | Abstract: | The temperature dependence of the electrical resistivity and magnetoresistance of Xe-ion beam sputtered Fe-Cr multilayers has been investigated. The electrical resistivity between 5 and 300 K in the fully ferromagnetic state, obtained by applying a field beyond the saturation field (H_sat) necessary for the antiferromagnetic(AF)-ferromagnetic(FM) field-induced transition, shows evidence of spin-disorder resistivity as in crystalline Fe and an s-d scattering contribution (as in 3d metals and alloys). The sublattice magnetization m(T) in these multilayers has been calculated in terms of the planar and interlayer exchange energies. The additional spin-dependent scattering Delta
ho (T) =
ho(T,H=0)_AF -
ho(T,H=H_sat)_FM in the AF state over a wide range of temperature is found to be proportional to the sublattice magnetization, both Delta
ho(T) and m(T) reducing along with the antiferromagnetic fraction. At intermediate fields, the spin-dependent part of the electrical resistivity (
ho_s (T)) fits well to the power law
ho_s (T) = b - cT^alpha where c is a constant and b and alpha are functions of H. At low fields alpha approx 2 and the intercept b decreases with H much the same way as the decrease of Delta
ho (T) with T. A phase diagram (T vs. H_sat) is obtained for the field- induced AF to FM transition. Comparisons are made between the present investigation and similar studies using dc magnetron sputtered and molecular beam epitaxy (MBE) grown Fe-Cr multilayers. | | Source: | arXiv, cond-mat/0111084 | | Services: | Forum | Review | PDF | Favorites | |
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