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28 March 2024
 
  » arxiv » cond-mat/0112165

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Reply to cond-mat/0111504
Mona Berciu ; R. N. Bhatt ;
Date 10 Dec 2001
Subject Materials Science; Disordered Systems and Neural Networks | cond-mat.mtrl-sci cond-mat.dis-nn
AbstractWe show that the choice of the sign of the hopping matrix in our impurity band model for disordered III-V diluted magnetic semiconductors [PRL 87, 107293 (2000); cond-mat/0111045] is justified: with this choice, the impurity band is placed inside the gap and it has a mobility edge, as expected for a disordered system. The other sign choice, suggested in cond-mat/0111504, leads to an unphysical description of the occupied states of the impurity band (extremely long tail, no mobility edge, no bulk ferromagnetism).
Source arXiv, cond-mat/0112165
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