| | |
| | |
Stat |
Members: 3645 Articles: 2'504'585 Articles rated: 2609
24 April 2024 |
|
| | | |
|
Article overview
| |
|
Atomistic view of the autosurfactant effect during GaN epitaxy | S T King
; M Weinert
; L Li
; | Date: |
18 May 2007 | Journal: | Phys Rev Lett, 98 (20), 206106 | Abstract: | The Ga-N site exchange critical to the autosurfactant effect during GaN epitaxy is studied. On the GaN(0001) pseudo (1x1), the first site exchange results in N incorporation at the subsurface T1 site, forming ghost islands. The second exchange that converts these islands to that of bilayer height can be triggered by continued scanning tunneling microscopy imaging, which involves electrons tunneling to or from localized states associated with the second layer Ga. The resulting electrostatic force sets off a chain reaction which frees these Ga atoms, allowing N to form covalent Ga-N-Ga bonds of a new GaN bilayer. | Source: | PubMed, pmid17677715 | Services: | Forum | Review | Favorites |
|
|
No review found.
Did you like this article?
Note: answers to reviews or questions about the article must be posted in the forum section.
Authors are not allowed to review their own article. They can use the forum section.
browser Mozilla/5.0 AppleWebKit/537.36 (KHTML, like Gecko; compatible; ClaudeBot/1.0; +claudebot@anthropic.com)
|
| |
|
|
|
| News, job offers and information for researchers and scientists:
| |