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Article overview
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Driving force and mechanism for spontaneous metal whisker formation | M W Barsoum
; E N Hoffman
; R D Doherty
; S Gupta
; A Zavaliangos
; | Date: |
12 Nov 2004 | Journal: | Phys Rev Lett, 93 (20), 206104 | Abstract: | The room temperature spontaneous growth of low melting point metal whiskers, such as Sn, poses a serious reliability problem in the semiconducting industry; a problem that has become acute with the introduction of Pb-free technology. To date, this 50+ year old problem has resisted interpretation. Herein we show that the driving force is essentially a reaction between oxygen and the sprouting metal. The resulting volume expansion creates a compressive stress that pushes the whiskers up. The model proposed explains our observations on In and Sn whiskers and many past observations. The solution is in principle simple: diffusion of oxygen into the metal must be prevented or slowed down. This was demonstrated by coating the active surfaces with a polymer coating. | Source: | PubMed, pmid15600944 | Services: | Forum | Review | Favorites |
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