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29 March 2024
 
  » pubmed » pmid15600944

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Driving force and mechanism for spontaneous metal whisker formation
M W Barsoum ; E N Hoffman ; R D Doherty ; S Gupta ; A Zavaliangos ;
Date 12 Nov 2004
Journal Phys Rev Lett, 93 (20), 206104
AbstractThe room temperature spontaneous growth of low melting point metal whiskers, such as Sn, poses a serious reliability problem in the semiconducting industry; a problem that has become acute with the introduction of Pb-free technology. To date, this 50+ year old problem has resisted interpretation. Herein we show that the driving force is essentially a reaction between oxygen and the sprouting metal. The resulting volume expansion creates a compressive stress that pushes the whiskers up. The model proposed explains our observations on In and Sn whiskers and many past observations. The solution is in principle simple: diffusion of oxygen into the metal must be prevented or slowed down. This was demonstrated by coating the active surfaces with a polymer coating.
Source PubMed, pmid15600944
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