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Strain induced deep electronic states around threading dislocations in GaN | | L Lymperakis
; J Neugebauer
; M Albrecht
; T Remmele
; H P Strunk
; | | Date: |
5 Nov 2004 | | Journal: | Phys Rev Lett, 93 (19), 196401 | | Abstract: | Combining through-focus high-resolution transmission electron microscopy and hierarchical multiscale simulations consisting of density-functional theory, analytical empirical potentials, and continuum elastic theory we demonstrate the existence of a new dislocation type in GaN. In contrast with all previously identified or suggested dislocation structures in GaN, all core atoms are fully coordinated; i.e., no broken bonds occur, implying that the dislocation should be electrically inactive. However, as we show, the giant local strain-field around the dislocation core, in combination with the small lattice constant of GaN, causes deep defect states and thus electrically active edge dislocations independent on the specific core structure. | | Source: | PubMed, pmid15600857 | | Services: | Forum | Review | Favorites | |
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