| | |
| | |
Stat |
Members: 3645 Articles: 2'504'928 Articles rated: 2609
25 April 2024 |
|
| | | |
|
Article overview
| |
|
Origins of growth stresses in amorphous semiconductor thin films | J A Floro
; P G Kotula
; S C Seel
; D J Srolovitz
; | Date: |
29 Aug 2003 | Journal: | Phys Rev Lett, 91 (9), 096101 | Abstract: | Stress evolution during deposition of amorphous Si and Ge thin films is remarkably similar to that observed for polycrystalline films. Amorphous semiconductors were used as model materials to study the origins of deposition stresses in continuous films, where suppression of both strain relaxation and epitaxial strain inheritance provides considerable simplification. Our data show that bulk compression is established by surface stress, while a subsequent return to tensile stress arises from elastic coalescence processes occurring on the kinetically roughened surface. | Source: | PubMed, pmid14525195 | Services: | Forum | Review | Favorites |
|
|
No review found.
Did you like this article?
Note: answers to reviews or questions about the article must be posted in the forum section.
Authors are not allowed to review their own article. They can use the forum section.
browser Mozilla/5.0 AppleWebKit/537.36 (KHTML, like Gecko; compatible; ClaudeBot/1.0; +claudebot@anthropic.com)
|
| |
|
|
|
| News, job offers and information for researchers and scientists:
| |