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Competitive growth model involving random deposition and random deposition with surface relaxation | | C M Horowitz
; R A Monetti
; E V Albano
; | | Date: |
31 May 2001 | | Journal: | Phys Rev E, 63 (6 Pt 2), 066132 | | Abstract: | A deposition model that considers a mixture of random deposition with surface relaxation and a pure random deposition is proposed and studied. As the system evolves, random deposition with surface relaxation (pure random deposition) take place with probability p and (1-p), respectively. The discrete (microscopic) approach to the model is studied by means of extensive numerical simulations, while continuous equations are used in order to investigate the mesoscopic properties of the model. A dynamic scaling ansatz for the interface width W(L,t,p) as a function of the lattice side L, the time t and p is formulated and tested. Three exponents, which can be linked to the standard growth exponent of random deposition with surface relaxation by means of a scaling relation, are identified. In the continuous limit, the model can be well described by means of a phenomenological stochastic growth equation with a p-dependent effective surface tension. | | Source: | PubMed, pmid11415198 | | Services: | Forum | Review | Favorites | |
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