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Article overview
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Studies of the Temperature-Driven Flow Lines and Phase Transitions in a Two-Dimensional Si/SiGe Hole System | C.T. Liang
; C. F. Huang
; Yu-Ming Cheng
; Tsai-Yu Huang
; Y. H. Chang
; Y. F. Chen
; | Date: |
18 Dec 2001 | Journal: | Chinese Journal of Physics, 39, L305 (2001) | Subject: | Mesoscopic Systems and Quantum Hall Effect | cond-mat.mes-hall | Abstract: | We have performed low-temperature transport experiments on a Si/SiGe hole system. The measured transverse and longitudinal condductivities $sigma_{xx}$ and $sigma_{xy}$ allow us to study the magnetic-field-induced transitions in the system. In particular, we present the first study of the temperature-driven flow lines in the "anomalous Hall insulator" regime near a Landau level filling factor $
u=1.5$. The "anomalous" temperature-driven flow lines could be due to the unusual energy level scheme in a Si/SiGe hole system. Moreover, for $3<
u<5$, there is a temperature-independent point in $
ho_{xx} (B)$, $
ho_{xy} (B)$, $sigma_{xx}$, and $sigma_{xy}$ which corresponds to a boundary of the quantum phase transition. | Source: | arXiv, cond-mat/0201333 | Services: | Forum | Review | PDF | Favorites |
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