|
| | | | |
| | | |
| Stat |
Members: 3645
Articles: 2'504'928
Articles rated: 2609
25 April 2024 |
|
| | | | |
|
Article overview
| |
|
|
Quantum Spin Hall Effect in Inverted Type II Semiconductors | | Chaoxing Liu
; Taylor L. Hughes
; Xiao-Liang Qi
; Kang Wang
; Shou-Cheng Zhang
; | | Date: |
18 Jan 2008 | | Abstract: | The quantum spin Hall (QSH) state is a topologically non-trivial state of
quantum matter which preserves time-reversal symmetry; it has an energy gap in
the bulk, but topologically robust gapless states at the edge. Recently, this
novel effect has been predicted and observed in HgTe quantum wells. In this
work we predict a similar effect arising in Type-II semiconductor quantum wells
made from InAs/GaSb/AlSb. Because of a rare band alignment the quantum well
band structure exhibits an "inverted" phase similar to CdTe/HgTe quantum wells,
which is a QSH state when the Fermi level lies inside the gap. Due to the
asymmetric structure of this quantum well, the effects of inversion symmetry
breaking and inter-layer charge transfer are essential. By standard
self-consistent calculations, we show that the QSH state persists when these
corrections are included, and a quantum phase transition between the normal
insulator and the QSH phase can be electrically tuned by the gate voltage. | | Source: | arXiv, 0801.2831 | | Services: | Forum | Review | PDF | Favorites | |
|
|
No review found.
Did you like this article?
Note: answers to reviews or questions about the article must be posted in the forum section.
Authors are not allowed to review their own article. They can use the forum section.
browser Mozilla/5.0 AppleWebKit/537.36 (KHTML, like Gecko; compatible; ClaudeBot/1.0; +claudebot@anthropic.com)
|
| |
|
|
|
|
News, job offers and information for researchers and scientists:
| |
REGISTER