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Practical design and simulation of silicon-based quantum dot qubits | | Mark Friesen
; Paul Rugheimer
; Donald E. Savage
; Max G. Lagally
; Daniel W. van der Weide
; Robert Joynt
; Mark A. Eriksson
; | | Date: |
1 Aug 2002 | | Journal: | Phys. Rev. B 67, 121301(R) (2003) | | Subject: | Materials Science | cond-mat.mtrl-sci | | Abstract: | Spins based in silicon provide one of the most promising architectures for quantum computing. A scalable design for silicon-germanium quantum dot qubits is presented. The design incorporates vertical and lateral tunneling. Simulations of a four-qubit array suggest that the design will enable single electron occupation of each dot of a many-dot array. Performing two-qubit operations has negligible effect on other qubits in the array. Simulation results are used to translate error correction requirements into specifications for gate-voltage control electronics. This translation is a necessary link between error correction theory and device physics. | | Source: | arXiv, cond-mat/0208021 | | Services: | Forum | Review | PDF | Favorites | |
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