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19 April 2024 |
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Fabrication and properties of gallium metallic photonic crystals | | V. F. Kozhevnikov
; M. Diwekar
; V. P. Kamaev
; J. Shi
; Z. V. Vardeny
; | | Date: |
20 Aug 2002 | | Subject: | Materials Science | cond-mat.mtrl-sci | | Abstract: | Gallium metallic photonic crystals with 100% filling factor have been fabricated via infiltration of liquid gallium into opals of 300-nm silica spheres using a novel high pressure-high temperature technique. The electrical resistance of the Ga-opal crystals was measured at temperatures from 10 to 280 K. The data obtained show that Ga-opal crystals are metallic network with slightly smaller temperature coefficient of resistivity than that for bulk gallium. Optical reflectivity of bulk gallium, plain opal and several Ga-opal crystals were measured at photon energies from 0.3 to 6 eV. A pronounced photonic stop band in the visible spectral range was found in both the plain and Ga infiltrated opals. The reflectivity spectra also show increase in reflectivity below 0.6 eV; which we interpret as a significantly lower effective plasma frequency of the metallic mesh in the infiltrated opal compare to the plasma frequency in the pure metal. | | Source: | arXiv, cond-mat/0208392 | | Services: | Forum | Review | PDF | Favorites | |
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