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26 April 2024 |
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Jumps in current-voltage characteristics in disordered films | | B.L. Altshuler
; V.E. Kravtsov
; I.V. Lerner
; I.L. Aleiner
; | | Date: |
23 Oct 2008 | | Abstract: | We argue that giant jumps of current at finite voltages observed in
disordered films of {em InO}, {em TiN} and {em YSi} manifest a bistability
caused by the overheating of electrons. One of the stable states is overheated
and thus low-resistive, while the other, high-resistive state is heated much
less by the same voltage. The bistability occurs provided that cooling of
electrons is inefficient, and, provided that the temperature dependence of the
{em equilibrium} resistance, $R(T)$ is steep enough. We use experimental the
experimental $R(T)$ and assume phonon mechanism of the cooling taking into
account its strong suppression by disorder. Our description of details of the
$I-V$ characteristics does not involve adjustable parameters and turns out to
be in a quantitative agreement with the experiments. We propose experiments for
more direct checks of this physical picture. | | Source: | arXiv, 0810.4312 | | Services: | Forum | Review | PDF | Favorites | |
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