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19 April 2024

» arxiv » cond-mat/0212459

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Synthesis, characterization and modeling of high quality ferromagnetic Cr-doped AlN thin films
Stephen Y. Wu ; H.X. Liu ; Lin Gu ; R.K. Singh ; L. Budd ; M. van Schilfgaarde ; M.R. McCartney ; David J. Smith ; N. Newman ;
Date:	18 Dec 2002
Subject:	Materials Science \| cond-mat.mtrl-sci
Abstract:	We report a theoretical and experimental investigation of Cr-doped AlN. Density functional calculations predict that the isolated Cr t2 defect level in AlN is 1/3 full, falls approximately at midgap, and broadens into an impurity band for concentrations over 5%. Substitutional Al1-xCrxN random alloys with 0.05 <= x <= 0.15 are predicted to have Curie temperatures over 600 K. Experimentally, we have characterized and optimized the molecular beam epitaxy thin film growth process, and observed room temperature ferromagnetism with a coercive field, Hc, of 120 Oersted. The measured magnetic susceptibility indicates that over 33% of the Cr is magnetically active at room temperature and 40% at low temperature.
Source:	arXiv, cond-mat/0212459
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