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Josephson transport through a Hubbard impurity center | | V.I. Kozub
; A.V. Lopatin
; V.M. Vinokur
; | | Date: |
20 Dec 2002 | | Subject: | Superconductivity | cond-mat.supr-con | | Abstract: | We investigate the Josephson transport through a thin semiconductor barrier containing impurity centers with the on-site Hubbard interaction $u$ of an arbitrary sign and strength. We find that in the case of the repulsive interaction the Josephson current changes sign with the temperature increase if the energy of the impurity level $epsilon$ (measured from the Fermi energy of superconductors) falls in the interval $(-u,0)$. We predict strong temporal fluctuations of the current if only a few centers present within the junction. In the case of the attractive impurity potential ($u<0$) and at low temperatures, the model is reduced to the effective two level Hamiltonian allowing thus a simple description of the nonstationary Josephson effect in terms of pair tunneling processes. | | Source: | arXiv, cond-mat/0212537 | | Services: | Forum | Review | PDF | Favorites | |
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