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28 March 2024
 
  » arxiv » 1001.4735

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Fast and slow edges in bilayer graphene nanoribbons: Tuning the transition from band- to Mott-insulator
Alberto Cortijo ; Laszlo Oroszlany ; Henning Schomerus ;
Date 26 Jan 2010
AbstractWe show that gated bilayer graphene zigzag ribbons possess a fast and a slow edge, characterized by edge state velocities that differ due to non-negligible next-nearest-neighbor hopping elements. By applying bosonization and renormalization group methods, we find that the slow edge can acquire a sizable interaction-induced gap, which is tunable via an external gate voltage V_{g}. In contrast to the gate-induced gap in the bulk, the interaction-induced gap depends non-monotonously on the on-site potential V.
Source arXiv, 1001.4735
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