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Article overview
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Probing diffusion in a graphene quantum capacitor at high frequency | E. Pallecchi
; A.C. Betz
; J. Chaste
; G. Fève
; B. Huard
; T. Kontos
; J.-M. Berroir
; B. Plaçais
; | Date: |
19 May 2010 | Abstract: | High-frequency properties of a long graphene capacitor have been measured and
used to investigate electronic diffusion at room temperature. A quantum
capacitance dip is observed at charge neutrality in quantitative agreement with
theory except at very low carrier density where the effect of impurities
dominates. The conductivity is deduced from the charge relaxation resistance.
It follows the quantum capacitance dependence in gate voltage indicating a
density-independent diffusion constant. This behavior of top-gated graphene
contrasts with the low-temperature linear density dependence reported for long
range charge impurity scattering. These results are also useful for the high
frequency dynamics of top gated graphene transistors. | Source: | arXiv, 1005.3388 | Services: | Forum | Review | PDF | Favorites |
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