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Scattering by flexural phonons in suspended graphene under back gate induced strain | | Héctor Ochoa
; Eduardo V. Castro
; M. I. Katsnelson
; F. Guinea
; | | Date: |
15 Aug 2010 | | Abstract: | We have studied electron scattering by out-of-plane (flexural) phonon modes
in doped suspended graphene and its effect on charge transport. In the
free-standing case (absence of strain) the flexural branch show a quadratic
dispersion relation, which becomes linear at long wavelength when the sample is
under tension due to the rotation symmetry breaking. In the non-strained case,
scattering by flexural phonons is the main limitation to electron mobility.
This picture changes drastically when strains above $ar{u}=10^{-4}
n(10^{12}, ext{cm}^{-2})$ are considered. Here we study in particular the
case of back gate induced strain, and apply our theoretical findings to recent
experiments in suspended graphene. | | Source: | arXiv, 1008.2523 | | Services: | Forum | Review | PDF | Favorites | |
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