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20 April 2024 |
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High-Quality Submicron Nb/Al-AlOx/Nb Josephson Junctions for Quantum Devices | | Christoph Kaiser
; J. M. Meckbach
; K. Ilin
; J. Lisenfeld
; R. Schäfer
; A. V. Ustinov
; M. Siegel
; | | Date: |
1 Sep 2010 | | Abstract: | We have developed a combined photolithography / electron-beam lithography
fabrication process for sub-{mu}m to {mu}m-size Nb/Al-AlOx/Nb Josephson
junctions of high quality. In order to define the junction size precisely and
protect its top electrode during anodic oxidation, the novel concept of an
aluminum hard mask has been developed and used. Josephson junctions of sizes
down to 0.5 {mu}m^2 have been fabricated and thoroughly characterized. We find
that they have a very high quality, which is shown by the IV curves with
quality parameters Vm > 50 mV at 4.2 K, as well as Ic*RN products of 1.75-1.93
mV attained at lower temperatures. In order to test the usability of our
fabrication process for quantum devices, we have also designed, fabricated and
experimentally investigated superconducting phase qubits. We found relaxation
times T1 = 26 ns and dephasing times T2 = 21 ns, which is longer than for
similar Nb/AlOx/Nb qubit structures fabricated by other groups. By
investigating the subgap leakage of some Josephson junctions in detail, we
found that our coherence times are not limited by quasiparticle leakage. | | Source: | arXiv, 1009.0167 | | Services: | Forum | Review | PDF | Favorites | |
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