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Optical transitions and energy relaxation of hot carriers in Si nanocrystals | A.N. Poddubny
; A.A. Prokofiev
; I.N. Yassievich
; | Date: |
1 Oct 2010 | Abstract: | Dynamics of hot carriers confined in Si nanocrystals is studied theoretically
using atomistic tight binding approach. Radiative, Auger-like and
phonon-assisted processes are considered. The Auger-like energy exchange
between electrons and holes is found to be the fastest process in the system.
However the energy relaxation of hot electron-hole pair is governed by the
single optical phonon emission. For a considerable number of states in small
nanocrystals single-phonon processes are ruled out by energy conservation law. | Source: | arXiv, 1010.0166 | Services: | Forum | Review | PDF | Favorites |
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