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25 April 2024

» arxiv » 1012.5716

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Growth of quantum well films of topological insulator Bi2Se3 on insulating substrate
Cui-Zu Chang ; Ke He ; Min-Hao Liu ; Zuo-Cheng Zhang ; Xi Chen ; Li-Li Wang ; Xu-Cun Ma ; Ya-Yu Wang ; Qi-Kun Xue ;
Date:	28 Dec 2010
Abstract:	Insulating substrates are crucial for electrical transport study and room temperature application of topological insulator films at thickness of only several nanometers. High quality quantum well films of Bi2Se3, a typical three-dimensional topological insulator, have been grown on alpha-Al2O3 (sapphire) (0001) by molecular beam epitaxy. The films exhibit well-defined quantum well states and surface states, suggesting the uniform thickness over macroscopic area. The Bi2Se3 thin films on sapphire (0001) provide a good system to study low-dimensional physics of topological insulators since conduction contribution from the substrate is negligibly small.
Source:	arXiv, 1012.5716
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