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Effect of Chemical Doping on the Thermoelectric Properties of FeGa3 | | N. Haldolaarachchige
; A.B. Karki
; W. Adam Phelan
; Y.M. Xiong
; R. Jin
; Julia Y. Chan
; S. Stadler
; D.P. Young
; | | Date: |
10 Jan 2011 | | Abstract: | Thermoelectric properties of the chemically-doped intermetallic narrow-band
semiconductor FeGa3 are reported. The parent compound shows semiconductor-like
behavior with a small band gap (Eg = 0.2 eV), a carrier density of ~ 10(18)
cm-3 and, a large n-type Seebeck coefficient (S ~ -400 mu V/K) at room
temperature. Hall effect measurements indicate that chemical doping
significantly increases the carrier density, resulting in a metallic state,
while the Seebeck coefficient still remains fairly large (~ -150 mu V/K). The
largest power factor (S2/{
ho} = 62 mu W/m K2) and corresponding figure of
merit (ZT = 0.013) at 390 K were observed for Fe0.99Co0.01(Ga0.997Ge0.003)3. | | Source: | arXiv, 1101.1949 | | Services: | Forum | Review | PDF | Favorites | |
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