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25 April 2024
 
  » arxiv » 1103.0355

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Experimental Investigation of Spin Transport Properties in Silicon by Using a Non-local Geometry
Masashi Shiraishi ; Yoshiya Honda ; Eiji Shikoh ; Yoshishige Suzuki ; Teruya Shinjo ; Tomoyuki Sasaki ; Tohru Oikawa ; Kiyoshi Noguchi ; Toshio Suzuki ;
Date 2 Mar 2011
AbstractA systematic investigation of spin transport properties in silicon at 8 K by using a non-local geometry is presented. The spin injection signal in the non-local scheme is found to increase in proportion to the evolution of bias electric currents. Theoretical fittings using the Hanle-type spin precession signals reveal that the spin polarization of the transported spin in the Si is much less affected by the change in the bias electric current compared with a case of the other spin devices, which induces a unique bias dependence of the spin signals.
Source arXiv, 1103.0355
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