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25 April 2024

» arxiv » 1106.0796

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Facile fabrication of lateral nanowire wrap-gate devices with improved performance
Sajal Dhara ; Shamashis Sengupta ; Hari S. Solanki ; Arvind Maurya ; Arvind Pavan R. ; M. R. Gokhale ; Arnab Bhattacharya ; Mandar M. Deshmukh ;
Date:	4 Jun 2011
Abstract:	We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step, and does not require chemical etching. We measure, in the temperature range 1.5-250 K, a subthreshold slope of 5-54 mV/decade and mobility of 2800-2500 $cm^2/Vs$ -- significantly larger than previously reported lateral wrap-gate devices. At depletion, the barrier height due to the gated region is proportional to applied wrap-gate voltage.
Source:	arXiv, 1106.0796
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