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Dirac band engineering in (Bi1-xSbx)2Te3 ternary topological insulators | | Jinsong Zhang
; Cui-Zu Chang
; Zuocheng Zhang
; Jing Wen
; Xiao Feng
; Kang Li
; Minhao Liu
; Ke He
; Lili Wang
; Xi Chen
; Qi-Kun Xue
; Xucun Ma
; Yayu Wang
; | | Date: |
9 Jun 2011 | | Abstract: | Three-dimensional (3D) topological insulators (TI) are novel quantum
materials with insulating bulk and topologically protected metallic surfaces
with Dirac-like band structure. The spin-helical Dirac surface states are
expected to host exotic topological quantum effects and find applications in
spintronics and quantum computation. The experimental realization of these
ideas requires fabrication of versatile devices based on bulk-insulating TIs
with tunable surface states. The main challenge facing the current TI materials
exemplified by Bi2Se3 and Bi2Te3 is the significant bulk conduction, which
remains unsolved despite extensive efforts involving nanostructuring, chemical
doping and electrical gating. Here we report a novel approach for engineering
the band structure of TIs by molecular beam epitaxy (MBE) growth of
(Bi1-xSbx)2Te3 ternary compounds. Angle-resolved photoemission spectroscopy
(ARPES) and transport measurements show that the topological surface states
exist over the entire composition range of (Bi1-xSbx)2Te3 (x = 0 to 1),
indicating the robustness of bulk Z2 topology. Most remarkably, the systematic
band engineering leads to ideal TIs with truly insulating bulk and tunable
surface state across the Dirac point that behave like one quarter of graphene.
This work demonstrates a new route to achieving intrinsic quantum transport of
the topological surface states and designing conceptually new TI devices with
well-established semiconductor technology. | | Source: | arXiv, 1106.1755 | | Services: | Forum | Review | PDF | Favorites | |
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