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Article overview
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Quasi-Freestanding Multilayer Graphene Films on the Carbon Face of SiC | David A. Siegel
; Choongyu Hwang
; Alexei V. Fedorov
; Alessandra Lanzara
; | Date: |
29 Jun 2011 | Abstract: | The electronic band structure of as-grown and doped graphene grown on the
carbon face of SiC is studied by high-resolution angle-resolved photoemission
spectroscopy, where we observe both rotations between adjacent layers and
AB-stacking. The band structure of quasi-freestanding AB- bilayers is directly
compared with bilayer graphene grown on the Si-face of SiC to study the impact
of the substrate on the electronic properties of epitaxial graphene. Our
results show that the C-face films are nearly freestanding from an electronic
point of view, due to the rotations between graphene layers. | Source: | arXiv, 1106.5811 | Services: | Forum | Review | PDF | Favorites |
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