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28 March 2024
 
  » arxiv » 1108.2551

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Shape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowires
Abhijeet Paul ; Mathieu Luisier ; Gerhard Klimeck ;
Date 12 Aug 2011
AbstractThe effect of geometrical confinement, atomic position and orientation of Silicon nanowires (SiNWs) on their thermal properties are investigated using the phonon dispersion obtained using a Modified Valence Force Field (MVFF) model. The specific heat ($C_{v}$) and the ballistic thermal conductance ($kappa^{bal}_{l}$) shows anisotropic variation with changing cross-section shape and size of the SiNWs. The $C_{v}$ increases with decreasing cross-section size for all the wires. The triangular wires show the largest $C_{v}$ due to their highest surface-to-volume ratio. The square wires with [110] orientation show the maximum $kappa^{bal}_{l}$ since they have the highest number of conducting phonon modes. At the nano-scale a universal scaling law for both $C_{v}$ and $kappa^{bal}_{l}$ are obtained with respect to the number of atoms in the unit cell. This scaling is independent of the shape, size and orientation of the SiNWs revealing a direct correlation of the lattice thermal properties to the atomistic properties of the nanowires. Thus, engineering the SiNW cross-section shape, size and orientation open up new ways of tuning the thermal properties at the nanometer regime.
Source arXiv, 1108.2551
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