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A scalable method for the synthesis of high quality topological insulator nanostructures | L. D. Alegria
; M. D. Schroer
; G. R. Poirier
; M. Pretko
; A. Chatterjee
; S. K. Patel
; J. R. Petta
; | Date: |
25 Aug 2011 | Abstract: | Bi2Se3 is a strong topological insulator (TI) with a single Dirac cone and
chiral spin texture. Surface-sensitive probes have directly accessed the
topological surface states, but transport measurements have proven diffcult due
to bulk contributions to the conductivity. Efforts aimed at isolating surface
transport properties have focused on mechanical exfoliation, electrical gating,
and chemical doping. An alternative way to minimize bulk contributions to the
conductivity is to synthesize nanostructures with a large surface-to-volume
ratio. We demonstrate the controlled synthesis of Bi2Se3 nanostructures with
large surface-to-volume ratio using metal-organic chemical vapor deposition
(MOCVD), a standard process for large scale production of semiconductor
compounds. Simple adjustment of the reactor parameters allows us to obtain
highly ordered nanoribbons up to 10 microns long or thin micron sized
platelets. The method can be readily extended to produce doped or ternary
compounds, enabling future TI transport measurements, efforts to isolate
Majorana Fermions, and the development of new thermoelectric materials. | Source: | arXiv, 1108.4978 | Services: | Forum | Review | PDF | Favorites |
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