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16 April 2024

» arxiv » 1110.5461

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Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation
Nicolas Reckinger ; Claude Poleunis ; Emmanuel Dubois ; Constantin Augustin Dutu ; Xiaohui Tang ; Arnaud Delcorte ; Jean-Pierre Raskin ;
Date:	25 Oct 2011
Abstract:	The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2-x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi2-x/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH can be further reduced. This process enables the formation of very low effective SBH ErSi2-x/n-Si contacts with a low thermal budget.
Source:	arXiv, 1110.5461
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