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25 April 2024

» arxiv » 1111.1485

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Landau quantization and the thickness limit of topological insulator thin films of Sb2Te3
Yeping Jiang ; Yilin Wang ; Mu Chen ; Zhi Li ; Canli Song ; Ke He ; Lili Wang ; Xi Chen ; Xucun Ma ; Qi-Kun Xue ;
Date:	7 Nov 2011
Abstract:	We report the experimental observation of Landau quantization of molecular beam epitaxy grown Sb2Te3 thin films by a low-temperature scanning tunneling microscope. Different from all the reported systems, the Landau quantization in Sb2Te3 topological insulator is not sensitive to the intrinsic substitutional defects in the films. As a result, a nearly perfect linear energy dispersion of surface states as 2D massless Dirac fermion system is achieved. We demonstrate that 4 quintuple layers are the thickness limit for Sb2Te3 thin film being a 3D topological insulator. The mechanism of the Landau level broadening is discussed in terms of enhanced quasiparticle lifetime.
Source:	arXiv, 1111.1485
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