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Optical spin injection and spin lifetime in Ge heterostructures | | F. Pezzoli
; F. Bottegoni
; D. Trivedi
; F. Ciccacci
; A. Giorgioni
; P. Li
; S. Cecchi
; E. Grilli
; Y. Song
; M. Guzzi
; H. Dery
; G. Isella
; | | Date: |
22 Nov 2011 | | Abstract: | We demonstrate optical orientation in Ge/SiGe quantum wells and study their
spin properties. The ultrafast electron transfer from the center of the
Brillouin zone to its edge allows us to achieve high spin-polarization
efficiencies and to resolve the spin dynamics of holes and electrons. The
circular polarization degree of the direct-gap photoluminescence exceeds the
theoretical bulk limit, yielding ~37% and ~85% for transitions with heavy and
light holes states, respectively. The spin lifetime of holes at the top of the
valence band is found to be ~0.5 ps and it is governed by transitions between
heavy and light hole states. Electrons at the bottom of the conduction band, on
the other hand, have a spin lifetime that exceeds 5 ns below 150 K. Theoretical
analysis of the electrons spin relaxation indicates that phonon-induced
intervalley scattering dictates the spin lifetime. | | Source: | arXiv, 1111.5209 | | Services: | Forum | Review | PDF | Favorites | |
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