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18 April 2024

» arxiv » 1201.2748

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Mott-Hubbard localization in model of electronic subsystem of doped fullerides
Yuriy Dovhopyaty ; Leonid Didukh ; Oleksandr Kramar ; Yuriy Skorenkyy ; Yuriy Drohobitskyy ;
Date:	13 Jan 2012
Abstract:	Microscopical model of a doped fulleride electronic subsystem taking into account the triple orbital degeneracy of energy states is considered within the configurational-operator approach. Using the Green function method the energy spectrum of the model at integer band filling $n=1$ is calculated, which case corresponds to $AC_{60}$ compounds. Possible correlation-driven metal-insulator transition in the model is discussed.
Source:	arXiv, 1201.2748
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