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Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption | | E. Pallecchi
; M. Ridene
; D. Kazazis
; C. Mathieu
; F. Schopfer
; W. Poirier
; D. Mailly
; A. Ouerghi
; | | Date: |
15 Mar 2012 | | Abstract: | In this letter we report on transport measurements of epitaxial graphene on
SiC(0001) with oxygen adsorption. In a $50 imes 50 mumathrm{m^2}$ size Hall
bar we observe the half-integer quantum Hall effect with a transverse
resistance plateau quantized at filling factor around $
u = 2$, an evidence of
monolayer graphene. We find low electron concentration of $9 imes 10^{11}
extrm{cm}^{-2}$ and we show that a doping of $10^{13} extrm{cm}^{-2}$ which
is characteristic of intrinsic epitaxial graphene can be restored by vacuum
annealing. The effect of oxygen adsorption on carrier density is confirmed by
local angle-resolved photoemission spectroscopy measurements. These results are
important for understanding oxygen adsorption on epitaxial graphene and for its
application to metrology and mesoscopic physics where a low carrier
concentration is required. | | Source: | arXiv, 1203.3299 | | Services: | Forum | Review | PDF | Favorites | |
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