| | |
| | |
Stat |
Members: 3643 Articles: 2'488'730 Articles rated: 2609
29 March 2024 |
|
| | | |
|
Article overview
| |
|
Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well | M. S. Miao
; Q. Yan
; C. G. Van de Walle
; W. K. Lou
; L. L. Li
; K. Chang
; | Date: |
14 May 2012 | Abstract: | Topological insulator (TI) states have been demonstrated in materials with
narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that
nanoscale engineering can also give rise to a TI state, even in conventional
semiconductors with sizable gap and small SOI. Based on advanced
first-principles calculations combined with an effective low-energy k*p
Hamiltonian, we show that the intrinsic polarization of materials can be
utilized to simultaneously reduce the energy gap and enhance the SOI, driving
the system to a TI state. The proposed system consists of ultrathin InN layers
embedded into GaN, a layer structure that is experimentally achievable. | Source: | arXiv, 1205.2912 | Services: | Forum | Review | PDF | Favorites |
|
|
No review found.
Did you like this article?
Note: answers to reviews or questions about the article must be posted in the forum section.
Authors are not allowed to review their own article. They can use the forum section.
browser claudebot
|
| |
|
|
|
| News, job offers and information for researchers and scientists:
| |