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29 March 2024
 
  » arxiv » 1205.2912

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Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well
M. S. Miao ; Q. Yan ; C. G. Van de Walle ; W. K. Lou ; L. L. Li ; K. Chang ;
Date 14 May 2012
AbstractTopological insulator (TI) states have been demonstrated in materials with narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy k*p Hamiltonian, we show that the intrinsic polarization of materials can be utilized to simultaneously reduce the energy gap and enhance the SOI, driving the system to a TI state. The proposed system consists of ultrathin InN layers embedded into GaN, a layer structure that is experimentally achievable.
Source arXiv, 1205.2912
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