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Diffusion on edges of insulating graphene with intra- and inter-valley scattering | | G. Tkachov
; Martina Hentschel
; | | Date: |
9 Aug 2012 | | Abstract: | Band gap engineering in graphene may open the routes towards transistor
devices in which electric current can be switched off and on at will. Is,
however, a semiconducting band gap alone sufficient to quench the current in
graphene? In this paper we demonstrate that despite a bulk band gap graphene
can still have metallic conductance along the sample edges. We find this for
single-layer graphene with a zigzag-type boundary which hosts gapless
propagating edge states even in the presence of a bulk band gap. By generating
inter-valley scattering, sample disorder reduces the edge conductance. However,
for weak scattering a metallic regime emerges with the diffusive conductance G
= (e^2/h)(l_KK’/ L) per spin, where l_KK’ is the transport mean-free path due
to the inter-valley scattering and L >> l_KK’ is the edge length. We also take
intra-valley scattering by smooth disorder (e.g. by remote ionized impurities
in the substrate) into account. Albeit contributing to the elastic
quasiparticle life-time, the intra-valley scattering has no effect on G. | | Source: | arXiv, 1208.1951 | | Services: | Forum | Review | PDF | Favorites | |
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