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Strong magnetoresistance of disordered graphene | | P. S. Alekseev
; A. P. Dmitriev
; I. V. Gornyi
; V. Yu. Kachorovskii
; | | Date: |
23 Oct 2012 | | Abstract: | We study theoretically magnetoresistance of graphene with the short-range
disorder. The key parameter determining magnetotransport properties - the
product of the cyclotron frequency and transport scattering time, depends in
graphene not only on magnetic field $H$ but also on electron energy
$varepsilon:$ $omega_c au_q propto H/varepsilon^2 .$ As a result,"quantum"
($omega_c au_q gg 1 $) and "classical" ($omega_c au_q ll 1 $) regimes may
coexist in the same sample at fixed $H,$ giving rise to a strong
magnetoresistance. We calculate the conductivity tensor within the
self-consistent Born approximation focusing on the case of relatively high
temperature, when Shubnikov de Haas oscillations are suppressed by thermal
averaging. We demonstrate that both at very low and at very high magnetic field
the longitudinal resistivity scales as a square root of $H$: $[varrho_{xx}(H)
-varrho_{xx}(0)]/varrho_{xx}(0)approx C sqrt{H},$ where $C$ is
temperature-dependent factor, different in the low- and strong-field limits.
Furthermore, we predict a non monotonic dependence of the Hall coefficient both
on magnetic field and on the electron concentration. Finally, we discuss the
case of the charged impurity potential and also find a square-root low-field
dependence of magnetoresistance near the Dirac point. | | Source: | arXiv, 1210.6081 | | Services: | Forum | Review | PDF | Favorites | |
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