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19 April 2024 |
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Intrinsic defects in silicon carbide LED as a perspective room temperature single photon source in near infrared | | F. Fuchs
; V. A. Soltamov
; S. Vaeth
; P. G. Baranov
; E. N. Mokhov
; G. V. Astakhov
; V. Dyakonov
; | | Date: |
12 Dec 2012 | | Abstract: | Generation of single photons has been demonstrated in several systems.
However, none of them satisfies all the conditions, e.g. room temperature
functionality, telecom wavelength operation, high efficiency, as required for
practical applications. Here, we report the fabrication of light emitting
diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate
our devices we used a standard semiconductor manufacturing technology in
combination with high-energy electron irradiation. The room temperature
electroluminescence (EL) of our LEDs reveals two strong emission bands in
visible and near infrared (NIR), associated with two different intrinsic
defects. As these defects can potentially be generated at a low or even single
defect level, our approach can be used to realize electrically driven single
photon source for quantum telecommunication and information processing. | | Source: | arXiv, 1212.2989 | | Services: | Forum | Review | PDF | Favorites | |
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