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24 April 2024

» arxiv » 1212.6807

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Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface
Handong Li ; Lei Gao ; Hui Li ; Gaoyun Wang ; Jiang Wu ; Zhihua Zhou ; Zhiming Wang ;
Date:	31 Dec 2012
Abstract:	The van der Waals epitaxy of single crystalline Bi2Se3 film was achieved on hydrogen passivated Si(111) (H:Si) substrate by physical vapor deposition. Valence band structures of Bi2Se3/H:Si heterojunction were investigated by X-ray Photoemission Spectroscopy and Ultraviolet Photoemission Spectroscopy. The measured Schottky barrier height at the Bi2Se3-H:Si interface was 0.31 eV. The findings pave the way for economically preparing heterojunctions and multilayers of layered compound families of topological insulators.
Source:	arXiv, 1212.6807
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