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26 April 2024

» arxiv » 1301.0362

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Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction
Zhaoquan Zeng ; Timothy A. Morgan ; Dongsheng Fan ; Chen Li ; Yusuke Hirono ; Xian Hu ; Joon Sue Lee ; Zhiming M. Wang ; Jian Wang ; Shuiqing Yu ; Michael E. Hawkridge ; Mourad Benamara ; Gregory J. Salamo ;
Date:	3 Jan 2013
Abstract:	High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.
Source:	arXiv, 1301.0362
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