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28 March 2024 |
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Point defects in SiC as a promising basis for single-defect, single-photon spectroscopy with room temperature controllable quantum states | Pavel G. Baranov
; Victor A. Soltamov
; Alexandra A. Soltamova
; Georgy V. Astakhov
; Vladimir V. Dyakonov
; | Date: |
Wed, 9 Jan 2013 16:27:28 GMT (1816kb) | Abstract: | The unique quantum properties of the nitrogen-vacancy (NV) center in diamond
have motivated efforts to find defects with similar properties in silicon
carbide (SiC), which can extend the functionality of such systems not available
to the diamond. Electron paramagnetic resonance (EPR) and optically detected
magnetic resonance (ODMR) investigations presented here suggest that silicon
vacancy (VSi) related point defects in SiC possess properties the similar to
those of the NV center in diamond, which in turn make them a promising quantum
system for single-defect and single-photon spectroscopy in the infrared region.
Depending on the defect type, temperature, SiC polytype, and crystalline
position, two opposite schemes have been observed for the optical alignment of
the ground state spin sublevels population of the VSi-related defects upon
irradiation with unpolarized light. Spin ensemble of VSi-related defects are
shown to be prepared in a coherent superposition of the spin states even at
room temperature. Zero-field ODMR shows the possibility to manipulate of the
ground state spin population by applying radiofrequency field. These altogether
make VSi-related defects in SiC very favorable candidate for spintronics,
quantum information processing, and magnetometry. | Source: | arXiv, 1301.1913 | Services: | Forum | Review | PDF | Favorites |
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