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Formation and stability of a two-dimensional nickel silicide on Ni (111) an Auger, LEED, STM, and high-resolution photoemission Study | B. Lalmi
; C. Girardeaux
; A. Portavoce
; C. Ottaviani
; B. Aufray
; J. Bernardini
; | Date: |
19 Mar 2013 | Abstract: | Using low energy electron diffraction (LEED), Auger electron spectroscopy
(AES), scanning tunnelling microscopy (STM) and high resolution photo-electron
spectroscopy (HR-PES) techniques we have studied the annealing effect of one
silicon monolayer deposited at room temperature onto a Ni (111) substrate. The
variations of the Si surface concentration, recorded by AES at 300{deg}C and
400{deg}C, show at the beginning a rapid Si decreasing followed by a slowing
down up to a plateau equivalent to about 1/3 silicon monolayer. STM images and
LEED patterns, both recorded at room temperature just after annealing, reveal
the formation of an ordered hexagonal superstructure(rot3xrot3)R30{deg}-type.
From these observations and from a quantitative analysis of HR-PES data,
recorded before and after annealing, we propose that the (rot3 x
rot3)R30{deg}superstructure corresponds to a two dimensional (2D) Ni2Si
surface silicide. | Source: | arXiv, 1303.4631 | Services: | Forum | Review | PDF | Favorites |
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