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Superconductivity induced by electron doping in the system La1-xMxOBiS2 (M = Ti, Zr, Hf, Th) | | D. Yazici
; K. Huang
; B. D. White
; I. Jeon
; V. W. Burnett
; A. J. Friedman
; I. K. Lum
; M. Nallaiyan
; S. Spagna
; M. B. Maple
; | | Date: |
25 Mar 2013 | | Abstract: | We report a strategy to induce superconductivity in the BiS$_2$-based
compound LaOBiS$_2$. Instead of substituting F for O, we increase the
charge-carrier density (electron dope) via substitution of tetravalent
Th$^{+4}$, Hf$^{+4}$, Zr$^{+4}$, and Ti$^{+4}$ for trivalent La$^{+3}$. It is
found that both the LaOBiS$_2$ and ThOBiS$_2$ parent compounds are bad metals
and that superconductivity is induced by electron doping with emph{T$_c$}
values of up to 2.85 K. The superconducting and normal states were
characterized by electrical resistivity, magnetic susceptibility, and heat
capacity measurements. We also demonstrate that reducing the charge-carrier
density (hole doping) via substitution of divalent Sr$^{+2}$ for La$^{+3}$ does
not induce superconductivity. | | Source: | arXiv, 1303.6216 | | Services: | Forum | Review | PDF | Favorites | |
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