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Epitaxial Growth of the Diluted Magnetic Semiconductors CryGe1-y and CryMnxGe1-x-y | G. Kioseoglou
; A.T. Hanbicki
; C.H. Li
; S.C. Erwin
; R. Goswami
; B.T. Jonker
; | Date: |
12 Feb 2003 | Journal: | Appl. Phys. Lett. 84, 1725 (2004) | Subject: | Materials Science | cond-mat.mtrl-sci | Abstract: | We report the epitaxial growth of CryGe1-y and CryMnxGe1-x-y(001) thin films on GaAs(001), describe the structural and transport properties, and compare the measured magnetic properties with those predicted by theory. The samples are strongly p-type, and hole densities increase with Cr concentration. The CryGe1-y system remains paramagnetic for the growth conditions and low Cr concentrations employed (y < 0.04), consistent with density functional theory predictions. Addition of Cr into the ferromagnetic semiconductor MnxGe1-x host systematically reduces the Curie temperature and total magnetization. | Source: | arXiv, cond-mat/0302231 | Services: | Forum | Review | PDF | Favorites |
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