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28 March 2024
 
  » arxiv » cond-mat/0302517

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Single-electron tunneling in InP nanowires
S. De Franceschi ; J.A. van Dam ; E.P.A.M. Bakkers ; L.F. Feiner ; L. Gurevich ; L.P. Kouwenhoven ;
Date 25 Feb 2003
Subject Mesoscopic Systems and Quantum Hall Effect | cond-mat.mes-hall
AbstractWe report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor-liquid-solid process. Our InP wires are n-type doped with diameters in the 40-55 nm range and lengths of several microns. After being deposited on an oxidized Si substrate, wires are contacted individually via e-beam fabricated Ti/Al electrodes. We obtain contact resistances as low as ~10 kOhm, with minor temperature dependence. The distance between the electrodes varies between 0.2 and 2 micron. The electron density in the wires is changed with a back gate. Low-temperature transport measurements show Coulomb-blockade behavior with single-electron charging energies of ~1 meV. We also demonstrate energy quantization resulting from the confinement in the wire.
Source arXiv, cond-mat/0302517
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