Research articles

search articles

My Pages

Stat

Members: 3645
Articles: 2'500'096
Articles rated: 2609

19 April 2024

» arxiv » 1307.4225

Article overview

Anomalous Hall effect in two-phase semiconductor structures: the crucial role of ferromagnetic inclusions
A.V. Kudrin ; A.V. Shvetsov ; Yu.A. Danilov ; D.A. Pavlov ; A.I. Bobrov ; N.V. Malekhonova ; A.A. Timopheev ; N.A. Sobolev ;
Date:	16 Jul 2013
Abstract:	The Hall effect in InMnAs layers with MnAs inclusions of 20-50 nm in size is studied both theoretically and experimentally. We find that the anomalous Hall effect can be explained by the Lorentz force caused by the magnetic field of ferromagnetic inclusions and by an inhomogeneous distribution of the current density in the layer. The hysteretic dependence of the average magnetization of ferromagnetic inclusions on an external magnetic field results in a hysteretic dependence of RH(Hext). Thus we show the possibility of a hysteretic RH(Hext) dependence (i.e. observation of the anomalous Hall effect) in thin conductive layers with ferromagnetic inclusions in the absence of carriers spin polarization.
Source:	arXiv, 1307.4225
Services:	Forum \| Review \| PDF \| Favorites

No review found.

Did you like this article?

This article or document is ...
important:
of broad interest:
readable:
new:
correct:
Global appreciation:

Note: answers to reviews or questions about the article must be posted in the forum section.
Authors are not allowed to review their own article. They can use the forum section.

browser Mozilla/5.0 AppleWebKit/537.36 (KHTML, like Gecko; compatible; ClaudeBot/1.0; +claudebot@anthropic.com)

ScienXe.org
» my Online CV
» Free

News, job offers and information for researchers and scientists:

home

contact

sitemap